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MBR20H100CT, MBRB20H100CT, MBRF20H100CT SWITCHMODETM Power Rectifier 100 V, 20 A
Features and Benefits
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* * * * * * *
Low Forward Voltage: 0.64 V @ 125C Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) Guard-Ring for Stress Protection Pb-Free Packages are Available
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS
1 2, 4 3 4
Applications
MARKING DIAGRAMS
* Power Supply - Output Rectification * Power Management * Instrumentation
Mechanical Characteristics:
TO-220AB CASE 221A STYLE 6 1 2
* Case: Epoxy, Molded * Epoxy Meets UL 94 V-0 @ 0.125 in * Weight (Approximately): * *
AYWW B20H100G AKA
3
1.9 Grams (TO-220) 1.7 Grams (D2PAK) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
1 2 3
AYWW B20H100G AKA ISOLATED TO-220 CASE 221D STYLE 3
MAXIMUM RATINGS
Please See the Table on the Following Page
4 1 2 3
D2PAK CASE 418B STYLE 3
AY WW B20H100G AKA
A Y WW B20H100 G AKA
= Assembly Location = Year = Work Week = Device Code = Pb-Free Device = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2007
March, 2007 - Rev. 4
1
Publication Order Number: MBR20H100CT/D
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
MAXIMUM RATINGS (Per Diode Leg)
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 162C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 160C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Controlled Avalanche Energy (see test conditions in Figures 11 and 12) ESD Ratings: Machine Model = C Human Body Model = 3B Symbol VRRM VRWM VR IF(AV) IFRM IFSM TJ Tstg dv/dt WAVAL Value 100 Unit V
10 20 250 +175 *65 to +175 10,000 200 > 400 > 8000
A A A C C V/ms mJ V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance (MBR20H100CT and MBRB20H100CT) (MBRF20H100CT) - Junction-to-Case - Junction-to-Ambient - Junction-to-Case RqJC RqJA RqJC 2.0 60 2.5 C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 A, TC = 25C) (IF = 10 A, TC = 125C) (IF = 20 A, TC = 25C) (IF = 20 A, TC = 125C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125C) (Rated DC Voltage, TC = 25C) vF V 0.77 0.64 0.88 0.73 mA 6.0 0.0045
iR
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number MBR20H100CT MBR20H100CTG MBRF20H100CTG MBRB20H100CTT4G Package Type TO-220 TO-220 (Pb-Free) TO-220FP (Pb-Free) D2PAK (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 800 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
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MBR20H100CT, MBRB20H100CT, MBRF20H100CT
IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100
TJ = 150C 10 TJ = 125C TJ = 25C
TJ = 150C 10 TJ = 125C
1
1
TJ = 25C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E-01 IR, REVERSE CURRENT (AMPS) 1.0E-02 1.0E-03 TJ = 125C TJ = 150C
IR, MAXIMUM REVERSE CURRENT (AMPS)
1.0E-01 TJ = 150C TJ = 125C
1.0E-02 1.0E-03
1.0E-04 1.0E-05 1.0E-06
1.0E-04 1.0E-05 1.0E-06 TJ = 25C
TJ = 25C
1.0E-07 20 40 60 80
1.0E-07 1.0E-08 0 20 40 60 80 100
1.0E-08 0
100
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
IF, AVERAGE FORWARD CURRENT (AMPS)
PFO, AVERAGE POWER DISSIPATION (WATTS)
20 dc 15 SQUARE WAVE 10
16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 SQUARE DC
5
0 100
110
120
130
140
150
160
170
180
TC, CASE TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating http://onsemi.com
3
Figure 6. Forward Power Dissipation
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
10000 TJ = 25C C, CAPACITANCE (pF)
1000
100
10
0
20
40
60
80
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
R(t), TRANSIENT THERMAL RESISTANCE
100 D = 0.5 10 0.2 0.1 1 0.05 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 P(pk) t1 t2
DUTY CYCLE, D = t1/t2 100 1000
Figure 8. Thermal Response Junction-to-Ambient for MBR20H100CT and MBRB20H100CT
R(t), TRANSIENT THERMAL RESISTANCE
10
1
D = 0.5 0.2 0.1 0.05 P(pk) t1 t2
0.1 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10
DUTY CYCLE, D = t1/t2 100 1000
Figure 9. Thermal Response Junction-to-Case for MBR20H100CT and MBRB20H100CT
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MBR20H100CT, MBRB20H100CT, MBRF20H100CT
R(t), TRANSIENT THERMAL RESISTANCE 10 D = 0.5 1 0.2 0.1 0.05 0.01 P(pk) t1 SINGLE PULSE 0.001 0.000001 t2
0.1
0.01
DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 100 1000
Figure 10. Thermal Response Junction-to-Case for MBRF20H100CT
+VDD IL 10 mH COIL VD MERCURY SWITCH ID IL ID VDD t0 t1 t2 t BVDUT
S1
DUT
Figure 11. Test Circuit
Figure 12. Current-Voltage Waveforms
The unclamped inductive switching circuit shown in Figure 11 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2).
EQUATION (1): BV 2 DUT W [ 1 LI LPK AVAL 2 BV -V DUT DD
EQUATION (2): 2 W [ 1 LI LPK AVAL 2
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MBR20H100CT, MBRB20H100CT, MBRF20H100CT
PACKAGE DIMENSIONS
D2PAK 3 CASE 418B-04 ISSUE J
C E -B-
4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
V W
1
2
3
S
A
-T-
SEATING PLANE
K G D 3 PL 0.13 (0.005) H
M
J
W
TB
M
VARIABLE CONFIGURATION ZONE L M
R
N U L
P L M
STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE
M
F VIEW W-W 1
F VIEW W-W 2
F VIEW W-W 3
SOLDERING FOOTPRINT*
8.38 0.33
10.66 0.42
1.016 0.04
5.08 0.20
17.02 0.67
3.05 0.12
mm inches
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MBR20H100CT, MBRB20H100CT, MBRF20H100CT
PACKAGE DIMENSIONS
TO-220 PLASTIC CASE 221A-09 ISSUE AB
-T- B
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.020 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 0.508 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
F
T
C S
Q
123
A U K
H Z L V G D N
R J
STYLE 6: PIN 1. 2. 3. 4.
TO-220 FULLPAK CASE 221D-03 ISSUE G
-T- F Q A
123 SEATING PLANE
-B-
C S U
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.625 0.635 0.408 0.418 0.180 0.190 0.026 0.031 0.116 0.119 0.100 BSC 0.125 0.135 0.018 0.025 0.530 0.540 0.048 0.053 0.200 BSC 0.124 0.128 0.099 0.103 0.101 0.113 0.238 0.258 MILLIMETERS MIN MAX 15.88 16.12 10.37 10.63 4.57 4.83 0.65 0.78 2.95 3.02 2.54 BSC 3.18 3.43 0.45 0.63 13.47 13.73 1.23 1.36 5.08 BSC 3.15 3.25 2.51 2.62 2.57 2.87 6.06 6.56
H K
-Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MBR20H100CT/D

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